The technological advancements and increasing demand for e-vehicles is anticipated to be an opportunity for the global IGBT market.

The Insulated-Gate Bipolar Transistor (IGBT) market is a minority carrier device with capability of high input impedance and carrying greater power current. As a result of these key benefits the global IGBT market is estimated to give substantial returns by end of the forecast period 2021-2028 thereby recording profitable annual growth in the forthcoming years. The Insulated-Gate Bipolar Transistor is usually used in switch, pulse modulation, phase control, etc. For example, for drive higher power applications with lower power input.

The three terminal power semiconductor devices used as an electronic switch for high efficiency and fast switching is referred as Insulated-Gate Bipolar Transistor. The Insulated-Gate Bipolar Transistor serves as an alternative switch for electrical current transit. The device used in pulse width modulation for high dynamic range control and reduce the level of audible noise Optimum ustilization in renewable energy applications is offering tremendous growth fillip to global IGBT  (Insulated-Gate Bipolar Transistor) market.

The current and future market attractiveness determines the global IGBT market is progressive and is poised to be worth 8.7 billion clocking a CAGR of over 11%. The key factors having a major influence on the market are the superior on-state current density, capability to produce smaller chip size, save cost, low driving power & simple drive circuit, easy control on high voltage and high current applications, excellent conduction, forward & reverse blocking capabilities. This is driving the growth of global IGBT market.

Also, Insulated-Gate Bipolar Transistor when coupled with advanced designs & processes and cell geometry to yield high latchup current capability offers greater advantages in applications and thrice returns on investment to the customer as well as the provider. However, minority carrier issues and higher costs as compared to MOSFETs are likely to deprive the global IGBT market growth. Furthermore, new IGBT product offerings at competitive prices, optimized device designs, and integration of cell geometry to yield high latchup power capability are anticipated to be an opportunity to the global IGBT market.

Adroit Market Research report on the global IGBT market offers a detailed global overview. The report studies the key factors influencing the market such as market drivers, threats, opportunities, and challenges. The historic years taken under consideration are 2018-2020, base year 2020, and projected growth estimated for years 2021-2028. The report studies the current market position and based on current findings predicts the future state of the market. The Porter’s Five Forces analysis and SWOT are used to give a detailed study of the competitive landscape.  The report covers all the key players, company profiles, major undertakings, financial information, and more. This helps the market entities get the exact idea of the on-going competition and how to act in the market to beat the competitors.  

The market players are providing innovative design and processes for the Insulated-Gate Bipolar Transistor. The well-recognized players to keep the market dominance are introducing new and advanced solutions. Also, they are pursuing strategic objectives such as mergers, acquisitions, expansions, and partnerships and are growing their market presence globally.

The discrete IGBT segment is driving the growth of the type segment. The key factors for the growth are that it offers highest standards in performance and quality. The high power rating IGBT is the major shareholder in the global IGBT market. The segment is projected to grow exponentially even in the future because it provides high switching speed and is highly efficient. The consumer electronics segment has recorded major revenue and is anticipated to get good growth opportunities due the factors like high voltage and high current capabilities that is enhancing the performance of the consumer electronic devices.

The North American region that hosts maximum revenue, cash flow, and high quality development areas in the region, currently dominates the global IGBT market and is expected to witness increased sales in the forthcoming the years. The maximum number of EV usage in the region had also driven the region’s growth.

The main IGBT manufacturers active in the global IGBT market spread all over the world and those have also excelled in distribution and sales area are Infineon Technologies, GeneSiC Semiconductors, ROHM, Microsemi, ON Semiconductor, Powerex, Microchip, Vishay, and STMicroelectronics. The global IGBT market is comprised of new entrants and established ones. The competition is fierce among the new entrants and traditional players racing to provide prime IGBT modules to the customers. Also, emerging players are providing healthy offerings of IGBT in the market in terms of new advances in power devices.

Key Segments of the Global IGBT Market

Type Overview, 2018-2028 (USD Billion)

• Discrete
• Modular

Power Rating Overview, 2018-2028 (USD Billion)

• High
• Medium
• Low

End User Overview, 2018-2028 (USD Billion)

• Consumer electronics
• Industrial Technology
• Energy
• Transportation
• Aerospace

Regional Overview, 2018-2028 (USD Billion)

North America

• U.S.
• Canada

Europe

• Germany
• UK
• France
• Rest of Europe

Asia Pacific

• China
• Japan
• India
• Rest of Asia Pacific

South America

• Brazil
• Mexico
• Rest of South America

Middle East and Africa